While MEMS switches offer obvious countermeasures for performance issues in smartphones, the defense and test segments also are recognizing their benefits in an array of applications....More
The feasibility of GaN-on-diamond HEMT devices has been proven with the successful transfer of a semiconductor epitaxial overlay onto a synthetic diamond substrate....More
This compact amplifier module provides better than 20 W output power with high gain from 6 to 18 GHz for broadband systems and measurement applications....More
This group of researchers found ways to compensate for the combined heating effect arising from the fact that the thermal relaxation time of the TES film is much longer than the period of the RF current....More
High-frequency amplifiers are supported by a wide range of electronic technologies, from vacuum tubes to transistors, with generous government funding in search of performance improvements....More
GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
New App Note: Best Practices for Making the Most Accurate Radar Pulse Measurements Sponsored by Agilent Technologies Download this app note
Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
Sponsored by Agilent Technologies Download this white paper