Scientists have made advancements in the controlled growth of molybdenum disulfide (MDS), a semiconductor film used in the creation of 2D electronic components with atom-thick circuits....More
Element Six has acquired Group4 Labs to strengthen their portfolio of semiconductor materials, with the heat from GaN devices effectively dissipated by the superior thermal properties of synthetic diamond materials....More
The feasibility of GaN-on-diamond HEMT devices has been proven with the successful transfer of a semiconductor epitaxial overlay onto a synthetic diamond substrate....More
Support is growing for car-to-car and car-to-infrastructure communication standards, creating traction in Europe that should quickly widen to encompass most of the world....More
This system on a chip (SoC) integrates diverse digital, analog, and RF blocks on a single die, allowing the RF transceiver and associated RF front end to co-exist with the rest of the SoC while maintaining RF performance....More
Fabricated in 0.13-micron CMOS and measuring just 5.9 square mm, this transceiver satisfies the IEEE 802.15.6 narrowband PHY standard as well as Bluetooth Low Energy to serve WBAN applications....More
GaN Roundtable: The State of GaN Reliability Today
Wednesday, April 3rd, 2013, 2:00 pm ET. Gallium nitride (GaN) has come a long way over the past few years in terms of affordability, industry acceptance and, in particular, reliability. In this webcast roundtable, a panel of expert speakers will assess the current state of GaN reliability, along with offering predictions for its future.
New App Note: Best Practices for Making the Most Accurate Radar Pulse Measurements Sponsored by Agilent Technologies Download this app note
Agilent Technologies Complex Modulation Generation with Low Cost Arbitrary Waveform Generators - Agilent's Trueform Architecture for Wireless Applications
Sponsored by Agilent Technologies Download this white paper