The 151-215-006 resistive six-way power divider is designed for sharing signals among as many as six 50-Ω antennas operating from DC to 6 GHz. The nominal insertion loss above the customary division loss is −1 dB from DC to 5 GHz and −1.6 dB from 5 to 6 GHz, with worst-case amplitude tracking of ±0.5 dB. The VSWR is 1.50:1. The divider, which is supplied with SMA female coaxial connectors, has an operating temperature range of −20 to +100°C.
BroadWave Technologies Inc., 170 Airport Pkwy., Ste. A, Greenwood, IN 46143; (317) 888-8316, www.broadwavetech.com
Model BME99109-40 is a Class AB linear solid-state GaN amplifier module capable of 40 W output power from 9 to 10 GHz with pulsed or CW signals. The X-band amplifier module features 46-dB power gain and handles RF input signals to +10 dBm.
The RF-to-dc efficiency is better than 18%. Second harmonics are better than −60 dBc while third harmonics are better than −80 dBc. Suitable as a TWT replacement, the amplifier is designed for voltage supplies of +36 to +45 V dc and has maximum power consumption of 225 W. The input VSWR is less than 1.80:1 and the output VSWR is 1.50:1. The amplifier is well guarded by protective circuitry, with forward and reverse power monitoring and thermal and load VSWR protection. It measures 4.00 × 4.00 ×3.33 in. and weighs 2.5 lb. It is equipped with female SMA connectors and designed for operating temperatures from 0 to +55°C.
Comtech PST, 105 Baylis Rd., Melville, NY 11747; (631) 777-8900.
A line of broadband GaAs MMIC amplifiers has been developed for applications sensitive to the effects of phase noise. These five amplifiers, which are available in die and 4 × 4 mm QFN packages, achieve phase noise as low as −165 dBc/Hz offset 10 kHz from the carrier. Model CMD245 is a chip amplifier with 18-dB gain and 3-dB noise figure from 6 to 18 GHz; model CMD245C4 is the packaged version, with 4.5-dB noise figure. Model CMD246 is a chip amplifier with 17-dB gain and 3.5-dB noise figure from 8 to 22 GHz; model CMD246C4 is the packaged version, with 5-dB noise figure. Model CMD247 is a die amplifier with 13-dB gain and 5-dB noise figure from 30 to 40 GHz. All are self-biased with a single supply from +3 to +5 V dc.
Custom MMIC, 300 Apollo Dr., Chelmsford, MA 01824; (978) 467-4290; www.custommmic.com
The IRHNJ9A7130 radiation-hardened power MOSFET has been developed for space applications. It is based on 100-V, N-channel R9 semiconductor technology and supplied in a hermetic, surface-mount-device (SMD) package. It is suitable for high-speed switching applications in data converters and motor controllers and features an ESD rating of Class 2 per MIL-STD-750, Method 1020. It is rated for maximum continuous drain current of 35 A at +12 V dc gate-source voltage and 140 A current under pulsed conditions. The maximum power dissipation is 75 W. The peak diode recovery response is 13 V/ns. The transistor is designed to handle operating temperatures from −55 to +150°C.
IR HiRel, An Infineon Technologies Co., 101 N. Sepulveda Blvd., El Segundo, CA 90245; (310) 252-7105; www.infineon.com
Two Ethernet-controlled attenuator systems are well suited for testing millimeter-wave radios and components for high-frequency 5G cellular wireless communications networks. The attenuator systems cover bandwidths of 100 MHz to 40 GHz with attenuation from 0 to 62 dB, adjustable in 1-dB steps. The systems are equipped with 2.9-mm RF connectors and RS-232/Ethernet connectors for computer control. Model 50PA-1019-XX 2.9MM is a 19-in., rack-mountable system that can be supplied with as many as 16 channels of attenuation. Model 50BA-025-62 2.9MM is supplied with two attenuators in a benchtop enclosure. Other configurations and attenuation ranges are available.
JFW Industries Inc., 5134 Commerce Square Dr., Indianapolis, IN 46237; (317) 877-1340, (877) 887-4JFW (4539).
A line of high-power coaxial bias tees has been developed for applications requiring low levels of passive intermodulation (PIM). The bias tees are available in wireless bands from 698 to 2,700 MHz with typical PIM levels of −165 dBc. Suitable for tower-top and in-building distributed-antenna-system (DAS) wireless communications applications, the bias tees are available in various configurations with Type N and other connectors.
MECA Electronics, Inc., 459 East Main St., Denville, NJ 07834; (866) 444-6322, (973) 625-0661.
Model ZN4PD1-183W+ is a four-way, 0-deg. power splitter/combiner that is suitable for a wide range of signal-processing applications from 4 to 18 GHz. Capable of passing as much as 4 A current from the sum port to the other four ports (100 mA at each port), the 50-Ω splitter/combiner can handle as much as 30 W RF input power as a splitter. The insertion loss (above the theoretical 6-dB splitting loss) is typically 0.7 dB across the full frequency range. Minimum isolation between ports is 18 dB and typically 22 dB across the full frequency range. The VSWR at all ports is typically 1.40:1 or better. The phase unbalance is typically ±3 deg. across the full frequency range while amplitude unbalance is typically ±0.25 dB. The rugged four-way power splitter/combiner is supplied in an aluminum alloy housing with SMA female connectors at all ports. It is designed for operating temperatures from −55 to +85°C.
Mini-Circuits, P.O. Box 350166, Brooklyn, NY 11235-003; (718) 934-4500.
TGA2307-SM is a high-power GaN amplifier designed for satellite communications or radar applications in the 5-to-6-GHz band. It provides 50 W saturated output power with pulsed signals with better than 28-dB small-signal gain. The amplifier provides power-added efficiency (PAE) of better than 44% with large-signal gain of 20 dB. Supplied in a 6 × 6 mm QFN plastic package, the amplifier draws 500 mA current from a +28-V dc supply.
Whether you are looking for power dividers or MOSFETs, Microwaves & RF has you covered. Here are some of the latest components to optimize your product, device, or system.
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