GaN Roundtable: Doherty Amplifiers and GaN Device Technology

Sponsored by: TriQuint, Freescale, MACOM & Cree

    Date & Time

  • This webinar is now available On-Demand.
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    Event Type

  • On-Demand Webinar


The Panel:

Moderated by: Nancy Friedrich
Editor in Chief, MicroWaves & RF
Enver Krvavac
Design Manager for Freescale’s RF Advanced Development Technology group.
Michael Ziehl
Director of Technical Marketing for MACOM
Jeff Gengler
Base Station Applications Engineering Manager forTriQuint
Simon Wood
Manager of RF Product Development at Cree



Doherty amplifiers are enjoying growing popularity as wireless applications continue to spread. They provide high power-added efficiency (PAE) and can preserve signal integrity (SI) even with complex digital modulation. In cellular networks like LTE systems, for example, they deliver outputs with high peak-to-average power ratios. Most recently, Doherty amplifiers have gained in power and performance by leveraging available gallium-nitride (GaN) power devices for higher power levels with even better efficiency than before. Featuring presenters from some of the leading GaN manufacturers in the microwave industry, this webcast roundtable will provide the latest information on GaN power transistors and ICs and how they are driving Doherty-amplifier performance for wireless communications and many other applications. Learn about the state of the art in today’s Doherty amplifiers and the GaN devices that are making these enhanced performance levels possible. This roundtable also will give you a chance to find out what lies ahead for both Doherty amplifiers and GaN device technology.

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