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Transistors Include ESD Protection

July 14, 2010

A line of energy-efficiency RF transistors from Infineon include electrostatic-discharge (ED) protection. The low-noise bipolar transistors are ideal for wireless applications, including in mobile handsets and wireless local area networks (WLANs). The new transistors provide effective ESD protection of up to 2 kV human body model (HBM). They offer noise figures as low as 0.6 dB at 2.4 GHz with high gain and moderate output power. For example, model BFP640ESD features maximum power gain of 23.5 dB under low-noise conditions at 1.5 GHz and operating from a +3-VDC supply. For high linearity operation, the maximum power gain is 26.5 dB at 1.5 GHz. The device has a minimum noise figure of 0.6 dB with associated gain of 23.5 dB at 1.5 GHz, with +12 dBm output power at 1-dB compression and an output third-order intercept point of +26.5 dBm. The ESD-protected bipolar transistors are supplied in SOT-343 and TSFP-4 packages.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.