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    1. Content

    InGaP HBT Amp Fires 2.3 To 2.8 GHz

    April 1, 2010
    Ideal for WiMAX and LTE applications from 2.3 to 2.8 GHz, model HMC755LP4E is a GaAs InGaP heterojunction-bipolar-transistor (HBT) amplifier from Hittite Microwave that provides as much as 31 dB gain across its operating band. Designed for use with a ...

    Ideal for WiMAX and LTE applications from 2.3 to 2.8 GHz, model HMC755LP4E is a GaAs InGaP heterojunction-bipolar-transistor (HBT) amplifier from Hittite Microwave that provides as much as 31 dB gain across its operating band. Designed for use with a single +5-VDC supply, it achieves 28-percent power-added efficiency (PAE) when delivering +33 dBm saturated output power. The GaAs MMIC amplifier, which provides +25-dBm orthogonal-frequency-division-multiplex (OFDM) output power, boasts error-vector-magnitude (EVM) performance of 2.5 percent. It includes three control pins for adjusting output power levels and an integrated output power detector pin. The amplifier is housed in a 4 x 4 mm QFN package.

    About the Author

    Jack Browne | Technical Contributor

    Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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