Although often associated with power amplifiers, E-pHEMT devices are also quite capable of supporting the design of efficient low-noise amplifiers.
Low-noise amplifiers (LNAs) for high-frequency applications have been based on GaAs metal-epitaxial-semiconductor field-effect-transistor (MESFET) and depletion-mode pseudomorphic-high-electron-mobility-transistor (pHEMT) technologies for some time...
Register or Sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.