Home

GaN-on-SiC HEMT Pushes Pulses To 1090 MHz (.PDF Download)

Nov. 7, 2013

Designed for high-power pulsed avionics applications, model MAGX-001090-600L00 is a gold-metalized, GaN-on-SiC high-electron-mobility transistor (HEMT) capable of 600 W output power from 1030 to 1090 MHz when driving signals with 32 μs pulse width at 2% pulse duty cycle. Suitable for secondary surveillance radar...

Register or sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.

Download

Sponsored Recommendations

eGuide: Getting started with wireless coexistence testing

Get with our eGuide a valuable piece for your wireless coexistence testing challenges. Register now and get the eGuide as a practical download or a hardcopy version via mail.

How Cellular-V2X (C-V2X) makes driving safer and more efficient

A comprehensive overview of applications enabled by C-V2X; including example scenarios, an explanation of the different types of communications and a list of regional standards...

White paper: Introduction to the vehicle-to-everything communications service V2X feature in 3GPP release 14

Login or register to gain full access to the Knowledge+ platform! I want to create an account White paper: Introduction to the vehicle-to-everything communications service V2X...

White paper: Mastering Automotive Radar Testing

Sign up for our new automotive radar white paper and learn more about: automotive radar market trends, automotive radar trend, radar measurement.