GaN Transistor Powers S-Band Radar (.PDF Download)

    Nov. 7, 2013

    Model IGN2729M250C is an internally impedance-matched, gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for S-band radar applications from 2.7 to 2.9 GHz. It delivers at least 250 W output power when...

    Register or sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.

    Download

    Continue Reading

    Sponsored Recommendations

    Learn about LiDAR and driver circuit requirements that impact inductor selection.
    Coilcraft offers high efficiency and low cost no-opto isolated flyback converters. Browse today.
    Trends, including the introduction of higher voltage rated semiconductor devices, have created a new emphasis on operating voltage as part of the inductor selection process. Inductors...
    All of Coilcraft’s automotive components are manufactured in IATF 16949 certified facilities. Redundant manufacturing capabilities around the globe, along with well-tuned logistics...