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GaN Transistor Powers S-Band Radar (.PDF Download)

Nov. 7, 2013

Model IGN2729M250C is an internally impedance-matched, gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for S-band radar applications from 2.7 to 2.9 GHz. It delivers at least 250 W output power when...

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