Gallium arsenide (GaAs) was once the automatic choice of semiconductor material for high-frequency solid-state devices, components, and integrated circuits (ICs), from amplifiers to switches. As GaAs devices grew in popularity for RF/microwave applications, they rapidly replaced legacy silicon-based semiconductors, such as bipolar transistors and metal-oxide-semiconductor field-effect transistors (MOSFETs), which were limited in frequency compared to GaAs field-effect transistors (FETs), heterojunction bipolar transistors (HBTs), and high electron mobility transistors (HEMTs)...
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