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    GaAs Amplifier Chip Boosts 71 To 86 GHz

    May 13, 2009
    The model HMC-ALH508 GaAs high-electron-mobility-transistor (HEMT), monolithic-microwave-integrated-circuit (MMIC) amplifier die from Hittite Microwave Corp. is ideal for automotive radar, military, and space applications from 71 to 86 GHz. The ...

    The model HMC-ALH508 GaAs high-electron-mobility-transistor (HEMT), monolithic-microwave-integrated-circuit (MMIC) amplifier die from Hittite Microwave Corp. is ideal for automotive radar, military, and space applications from 71 to 86 GHz. The three-stage chip features 13 dB small-signal gain with 4.5 dB noise figure and +7 dBm output power at 1-dB compression. It operates from two supply voltages at +2.1 and +2.4 VDC while consuming only 30 mA supply current. The amplifier is fully passivated for reliable operation.

    About the Author

    Jack Browne | Technical Contributor

    Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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