Freescale Semiconductor took the wraps off the world's highest-power LDMOS transistor at this week's MTT-S in Honolulu. The company's model MRF6VP11KH delivers 1 kW pulsed output power at 130 MHz. Designed for use from 10 to 150 MHz in magnetic resonance imaging (MRI) systems and plasma generators, the transistor features 65-percent drain efficiency and more than 27 dB gain. The 50-V device offers relatively high terminal impedances for ease of matching. It is supplied in a RoHS-compliant, air-cavity package with excellent thermal qualities. Freescale Semiconductor (