Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for radio frequency (RF) and power-management applications.
Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and power management applications. Our advanced proprietary, technologies and devices significantly reduce complexity, size, weight and power consumption of system solutions at an aggressive price point - delivering dramatically improved power conversion Figure of Merit compared to Silicon solutions. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications from 5G cellular infrastructure to consumer, automotive and defense and security. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability.
It's the third day of the IMS live event in Atlanta. Come along as we continue our coverage of exciting new products debuting on the exhibition's bustling show floor.
