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Power Amplifier Boosts 2 To 4 GHz

March 11, 2010

Model SSPA 2.0-4.0-100 is a high-power amplifier from Aethercomm built for use from 2 to 4 GHz especially in harsh environments. Based on gallium-nitride (GaN) device technology, the amplifier provides 100 W output power at 3-dB compression with 54 dB small-signal gain. It exhibits maximum input and output VSWR of 2.0:1. The amplifier is equipped with DC switching circuitry that enables and disables the microwave transistors within the amplifier with typical turn-on time of 540 ns and typical turn-off time of 230 ns. Standard features include reverse polarity protection, output-short and open-circuit protection, and over/under voltage protection. The amplifier, which measures 9.25 x 12.00 x 1.50 in., operates from a +28-VDC supply.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.