Integra Technologies
GaN-on-SiC HEMT

GaN-on-SiC Transistor Powers IFF Systems

Nov. 8, 2018
A GaN-on-SiC HEMT provides 120-W pulsed output power at 1,030 and 1,090 MHz for IFF avionics systems.

Solid-state power is steadily increasing at higher frequencies, enabling greater mobility and portability in electronic defense systems. As an example, Integra Technologies recently added to its portfolio of solid-state devices with its 120-W model IGN1011L120 high-electron-mobility transistor (HEMT) for L-band identify-friend-or-foe (IFF) avionics systems at 1,030 and 1,090 MHz. The gold-metalized, depletion-mode device, which is specified for use under Class AB linear biasing conditions, is supplied in a metal package with ceramic-epoxy lid measuring 1.340 × 0.385 in. (34.04 × 9.78 mm).

The rugged L-band GaN-on-SiC transistor delivers 120 W peak output power with typical power gain of 16.5 dB. Its typical drain efficiency of 75% supports the mobility and portability needed for IFF applications; it incorporates internal impedance prematching and requires a negative gate voltage and bias sequencing during normal operation. The transistor draws 160 mA quiescent drain current from a 50-V dc supply under Mode S pulsed conditions, with 6.4% duty factor (32 µs on and 18 µs off). The robust transistor is assembled via chip-and-wire technology.

To show that even more output power was possible by housing this semiconductor technology in a slightly larger package, the firm developed the model IGN1011L1200 GaN-on-SiC HEMT for 1,030-to-1,090 MHz IFF applications, with 1,200 W pulsed output power and about 17-dB gain at 1,030 and 1,090 MHz.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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