Browse our complete IMS 2024 coverage.
Here, we offer roundups of coverage from the 2024 edition of the International Microwave Symposium (IMS) in Washington, D.C. This is Part 3 of 4.
Teledyne e2v HiRel (Booth 1021) is featuring its enhanced ultra-low-power and low-noise amplifier (LNA) for new space applications from UHF to S-band (0.3 GHz to 4 GHz. Model TDLNA0840SEP, which comes in a 16-pin QFN plastic package, is suited for use in high-reliability applications where ultra-low power consumption, low noise figure, and small package footprint are critical.
The LNA is fabricated on a 150-nm, enhancement-mode, pseudomorphic high-electron-mobility transistor (pHEMT) process. The device leverages monolithic microwave integrated circuit (MMIC) design techniques and consumes just 27 mW of power while delivering a gain of 29 dB from 0.3 GHz to 4 GHz. It does so while maintaining a noise figure of less than 2 dB and an input P1dB of -35 dBm. The internally self-biasing device runs on VDD = +1.5 volts and IDDQ = 17.8 mA typical.
A customer evaluation kit is available for this LNA, which fits well in satellite communication systems featuring increased power of radio signals with minimal noise and distortion which can degrade digital signals. The TDLNA0840SEP is TID radiation tolerant to 100 krad (Si) and is qualified per Teledyne’s Space enhanced plastic flow. It’s available for sampling in third quarter 2024 and will be available for shipment in December 2024.
WIN Semiconductors (Booth 531) has expanded its RF GaN technologies portfolio with a beta release of its NP12-0B mmWave GaN-on-SiC process. At its heart is a 0.12-µm-gate RF GaN HEMT technology with refinements that enhance DC and RF ruggedness while adding die-level moisture resistance. NP12-0B also encompasses multiple transistor improvements that provide high ruggedness when operated in deep-saturation/high-compression pulsed and CW conditions.
This new rugged technology eliminates the pulse-droop behavior observed in GaN HEMT power amplifiers, which boosts the range and sensitivity of pulsed-mode radar systems. What’s more, the technology is available with an enhanced moisture ruggedness option. This lends devices with high humidity resistance when used in plastic packaging.
The NP12-0B platform, which supports fabrication of full MMICs, allows customers to develop compact pulsed or CW saturated power amplifiers for applications through 50 GHz. This process is qualified for 28-V operation; in the 29-GHz band, it generates saturated output power of 4.5 W/mm with 12 dB of linear gain and over 40% power-added efficiency. The NP12-0B technology is a strong candidate for rugged pulsed-mode, high-power amplifiers used in advanced radar systems.
dB Control (Booth 2112) is at IMS 2024 to launch two new products. One, the dB-9006 Magnum Opus microwave synthesizer, delivers phase-noise performance that’s said to be from 10 to 20 dB better than competing units. It also offers a frequency range from 100 MHz to 27 GHz with 1-Hz resolution mode, -80 dBc non-harmonic spur performance, and fast tuning (<50 µs), with a secondary output tuning from 1 MHz to 2000 MHz. This instrument-grade synthesized signal source supports three interfaces, including 4-wire SPI and two SCPI interfaces using either RS-232 or USB. Applications include communications intelligence (COMINT), ECM, low-jitter ADC and DAC clocks, radars, satellite links, test and measurement, and radio astronomy.
If you’ve come to IMS looking for amplifiers, the dB-8048 GaN solid-state power amplifier operates from 2.9 to 3.3 GHz, delivers 1.5 kW of peak output power in pulsed operation with instantaneous pulse operation over the entire band, and has a duty cycle up to 10%. The amplifier also provides a 0.5- µs pulse width and 50-Ω input/output impedance. A modular design and scalable architecture allow for phase combining to achieve up to 6 kW and 10 kW output power. Small and lightweight with built-in fan cooling, the dB-8048 is designed for high-performance MIL-STD applications such as radars; high-resolution SAR systems; and ground, naval, and airborne platforms where high reliability and ruggedness are critical to system performance.
Demonstrations and new product announcements will include:
- GaN-on-SiC MMIC Ka-band power amplifier: This demonstration showcases a 6-W driver and a 10-W PA operating in the 33- to 37-GHz band. These parts are fabricated using MACOM’s 140-nm, GaN-on-SiC technology.
- 300-W X-band GaN-on-SiC matched power amplifier: This new amplifier is fully matched to 50 Ω at both input and output ports. Suitable for pulsed radar applications such as marine, defense, and weather radar, it combines output power, signal gain, and drain efficiency in a small form factor at 9 GHz.
- C-Band 100-W GaN-on-SiC power amplifier with 57% power-added efficiency (PAE): This GaN power amplifier combines high gain and high efficiency for pulsed power applications within a small footprint (7 × 7 mm). This demo also features MACOM’s XP1044 driver amplifier and MACP-011113 surface mount directional coupler.
Mini-Circuits (Booth 1639) displays a variety of high-quality VNA cables designed to interface directly with the rugged/NMD ports of industry-standard VNAs. The cables are resistant to crushing and torquing and are protected by flexible stainless-steel sheaths. They feature excellent VSWR and low insertion loss as well as phase stability and repeatable performance.
The model selection features connector types including 1.85, 2.4, and 2.92 mm with upper frequencies of 67, 50, and 40 GHz, respectively. These cables represent a cost-effective alternative to expensive OEM cables with outstanding performance for demanding measurements.