GaN Amplifier Drives 600 W from 8.5 to 10.0 GHz

April 23, 2015

This high-power pulsed amplifier module provides 600 W output power from 8.5 to 10.0 GHz.

Based on gallium-nitride (GaN) power transistors, model BMC858109-600 is a rugged power-amplifier module capable of 600 W (+58-dBm) pulsed output power from 8.5 to 10.0 GHz. The Class AB linear amplifier module is designed for use with signals having pulse widths from 2 to 100 μs. Pulse rise/fall times are typically better than 60 ns. The GaN amplifier module provides 58-dB nominal gain with ±1-dB gain variation from 9.5 to 10.0 GHz and ±2-dB gain variation from 8.5 to 10.0 GHz. The amplifier is designed to handle maximum duty cycle of 10% with less than 1-dB pulse droop. The amplifier has input VSWR of less than 1.50:1 while output VSWR of less than 2.0:1, with second harmonics of better than -40 dBc. The amplifier draws 9 A from a +28-VDC supply. It measures 10.0 in. × 8.5 in. × 1.0 in. and weighs 5 lb. It is a suitable building block for phased-array radar systems, and is available with an optional digital interface for control and status monitoring.

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About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.