Gain Block/Driver Amplifier Covers DC To 10 GHz

Nov. 9, 2010

A SURFACE-MOUNT-TECHNOLOGY (SMT), pHEMT, monolithic-microwave-integrated- circuit (MMIC) driver amplifier serves high-linearity applications from DC to 10 GHz. The HMC788LP2E gallium-arsenide (GaAs), internally matched, Darlington gain-block amplifier delivers gain to 14 dB. It provides +20 dBm output power at 1-dB compression and an output third-order intercept point to +30 dBm. Thanks to an active on-chip bias circuit, the amplifier consumes just 76 mA from a single +5-VDC supply. This 2-x-2-mm DFN-packaged amplifier can be used as either a cascadable 50-?? gain stage or to drive the local-oscillator (LO) port of many of the company's singleand double-balanced mixers. The HMC788LP2E is well suited for use in multiband infrastructure applications, such as software-defined radios (SDRs), and in point-to-point and test and measurement subsystems. The amplifier is sampling now.

Hittite Microwave Corp.
20 Alpha Rd.
Chelmsford, MA 01824
(978) 250-3343
FAX: (978) 250-3373
Internet: www.hittite.com

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About the Author

Nancy Friedrich | RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.