16-W GaAs FETs Cover 6.4 To 8.5 GHz

July 16, 2010

The "EL" series of three galliumarsenide (GaAs) field-effect transistors (FETs) provides +42.5 dBm output power at 1-dB compression. The TIM6472-16EL operates from 6.4 to 7.2 GHz with 11.0 dB power gain at 1-dB compression and power-added efficiency (PAE) of 37 percent. Its sibling, the TIM7179-16EL, covers 7.1 to 7.9 GHz. It typically provides 10.5 dB power gain at 1-dB compression with 37 percent PAE. Finally, the TIM7785-16EL spans 7.7 to 8.5 GHz while providing 10.0 dB of power gain (typical) at 1-dB compression. It offers PAE of 36 percent.

Toshiba America Electronic Components, 19900 MacArthur Blvd., Suite 400, Irvine, CA 92612; (949) 623-2900, FAX: (949) 474-1300, Internet: www.toshiba.com/taec.

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Nancy Friedrich | RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.