Amp Aims At High Efficiency

Feb. 11, 2010
Nujira and RF Micro Devices (RFMD) have teamed on what they feel is the world's most efficient broadband power amplifier. Based on gallium nitride (GaN) technology, the RFG1M family of amplifiers from RFMD use Nujira's Coolteq.h envelope tracking power ...

Nujira and RF Micro Devices (RFMD) have teamed on what they feel is the world's most efficient broadband power amplifier. Based on gallium nitride (GaN) technology, the RFG1M family of amplifiers from RFMD use Nujira's Coolteq.h envelope tracking power modulators to achieve better than 50-percent efficiency across a bandwidth of 728 to 960 MHz. The design is based on RFMD's model RFG1M09180 180-W GaN transistor. The two companies hope to combine their resources to cover the cellular frequency range from 700 to 2600 MHz with just three amplifiers in the near future. For more information on this innovative amplifier design, don't miss the special report on advanced semiconductor technology by Editor Nancy Friedrich, in the February issue of Microwaves & RF.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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