Jazz Semiconductor Unleashes 200-GHz SiGe BiCMOS Process

Jazz Semiconductor (Newport Beach, CA) has announced the availability of a complete design platform in concert with its new 200-GHz SiGe BiCMOS technology, the SBC18H2 process, which is well suited for RF, microwave, and millimeter-wave integrated analog and mixed-signal semiconductor chips. The new process addresses performance requirements for the most demanding wireless and physical layer fiber network ICs as well as enabling low-power circuits for general wireless applications. By working with customers and university researchers, the company has validated key circuit building blocks for next-generation products, including 60-GHz wireless data and collision avoidance radars. "Our goal is to provide advanced process technology that offers the ability to integrate more functions on a single die," said Paul Kempf, Jazz Semiconductor CTO and CMO. "Modular mixed-signal and RF processes give engineers the opportunity to design more highly integrated products to keep pace with the continuing convergence trend of packing more capability into smaller devices," he added. As a companion to the 200-GHz SiGe process, the new design environment supports fully scalable device models for SiGe bipolar and RF CMOS, statistical simulation with mismatch capabilities, an integrated inductor design toolbox, and other features that enhance predictability for first-time manufacturing success.

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