Doherty Amp Boosts China’s LTE Signals

March 27, 2013

A miniature but robust power amplifier based on a discrete GaN device has been developed for LTE microcellular base stations.

Jack Browne

One of the leading high-frequency semiconductor developers, TriQuint Semiconductor, recently unveiled a GaN-based Doherty power amplifier for China’s Long-Term-Evolution (LTE) microcellular applications. The amplifier, which is based on the firm’s model T1G6001528-Q3 discrete GaN power transistor, was unveiled during the March 12-14, 2013 technical conference at the Electronic Design Innovation Conference (EDI CON) in Beijing, China.

The compact GaN power amplifier delivers +38.5-dBm average output power with peak saturated output power of better than +46 dBm from 2.62 to 2.69 GHz. The amplifier, which measures just 30 × 70 mm, provides more than 15-dB gain and is designed for two-carrier operation with adjacent-channel-power-ratio (ACPR) performance of better than -50 dBc.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.