SiGe Amplifier Boosts 2 GHz

April 18, 2014

A SiGe BiCMOS amplifier provides high gain from 20 MHz to 2 GHz.

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Model LTC6431-20 is a broadband silicon-germanium (SiGe) BiCMOS amplifier designed for single-ended applications from 20 MHz to 2 GHz. It provides 20-dB gain across the frequency range with an output third-order intercept point (OIP3) of +22 dBm. The amplifier is available in A and B grade versions, with the former offering OIP3 of +42.2 dBm at 240 MHz and the latter with an OIP3 of +45.7 dBm at 240 MHz. The typical noise figure is 2.6 dB at 240 MHz. Each amplifier, which is matched to 50 Ω and runs on a single +5-VDC supply, requires only input and output DC blocking capacitors and a choke to bias the open collector output port.

Linear Technology, 1630 McCarthy Blvd., Milpitas, CA 95035-7417; (408) 432-1900, FAX: (408) 434-0507

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.