Designed for high-power pulsed avionics applications, model MAGX-001090-600L00 is a gold-metalized, GaN-on-SiC high-electron-mobility transistor (HEMT) capable of 600 W output power from 1030 to 1090 MHz when driving signals with 32 μs pulse width at 2% pulse duty cycle. Suitable for secondary surveillance radar in air traffic control systems, the high-power pulsed transistor offers 21.4-dB typical gain with 63% drain efficiency. It handles load mismatches as severe as a 5.0:1 VSWR. The device is rated for a mean time to failure (MTTF) of more than 600 years when operating at a maximum junction temperature of +200°C. It is designed for use with a +50-VDC supply and suffers pulse droop on a mere 0.2 dB. Evaluation circuit boards are available from stock.
MACOM Technology Solutions, Inc., 100 Chelmsford St., Lowell, MA 01851; (800) 366-2266, (978) 656-2896.
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About the Author
Jack Browne
Technical Contributor
Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.