What is in this article?:
- Europe Welcomes RF/Microwave Firms to EuMW
- Tackling Test
The 2013 EuMW is the year’s top RF/microwave event in Europe.
More than 250 exhibiting RF/microwave companies will be on hand at the upcoming 43rd European Microwave Conference & Exhibition (EuMW), attracting more than 5000 attendees. Scheduled for October 6-11, 2013, the event will be held at the Nuremberg Convention Center in Nuremberg, Germany. The technical portion of the event is actually three different conferences: the European Microwave Conference (EuMC), the European Microwave Integrated Circuits Conference (EuMIC), and the European Radar Conference (EuRAD). The exhibition runs for three days, October 8-10, with an exhibitors’ list that includes some of the top company names in the RF/microwave industry.
Cree, which at mid-year had announced shipping over two million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications applications, will offer many examples of its high-power GaN transistors. These include model CGHV22100F (Fig. 1); nominally designed for 100 W output power, this power transistor is ideal for 1800 to 2200 MHz LTE cellular applications. It can provide typical gain of 18.7 dB at 1800 MHz, 20.7 at 2 GHz, and 22 dB at 2.2 GHz. The drain efficiency at +44 dBm output power is typically 35.4% at 1.8 GHz, 31.7% at 2.0 GHz, and 30.6% at 2.2 GHz.
The adjacent-channel leakage ratio (ACLR) is typically -35 dBc when measured at 25 W average output power. The rugged GaN power transistor, which is rated for drain-source voltage of +125 VDC, is available in a ceramic/metal flange package (model CGH22100F) or a drop-in ceramic-metal package (model CGHV22100P).
MACOM Technology Solutions will also be present on the exhibition floor with GaN power devices, although these will be the company’s “GaN in Plastic” power transistors in miniature 3 x 6 mm dual-flat-no-leads (DFN) and standard small-outline-transistor (SOT-89) plastic packages. These 50-V devices (Fig. 2) include model MAGX-000035-0900P in a 3 x 6 mm package and model MAGX-000040-5000P in an SOT-89 housing. The former achieves 95 W pulsed output power from DC to 3.5 GHz with 65% power-added efficiency (PAE) at 1 GHz and 17.5-dB gain while the latter provides 5.3 W pulsed output power from DC to 4 GHz with 65% PAE at 1 GHz and 14-dB gain.
Both are tested with a 1-ms pulse at 10% duty cycle. Although associated with low-cost applications, these power transistors are suitable for both military and commercial applications; the plastic housings are calculated for mean time to failure of approximately 600 years at an operating temperature of +200°C.
The Advanced Circuit Materials division of Rogers Corp. will display examples of its many printed-circuit-board (PCB) materials on the 2013 EuMC exhibition floor, including its improved RO4700JXR™ Series antenna-grade laminates for commercial applications in cellular base stations. The low-loss dielectric materials incorporate low-profile copper foil to provide reduced passive intermodulation (PIM) distortion with low insertion loss. The thermoset resin laminate series includes materials with dielectric constant of 2.55 and 3.0 which are well suited as low-cost PCB materials for commercial communications antennas.
Rogers will also show its RO4360 laminates for power amplifier circuits (Fig. 3). These PCB materials exhibit a high dielectric constant of 6.15 which allows miniaturization of high-frequency amplifier circuits. The excellent thermal conductivity of 0.80 W/mK helps to dissipate heat from those more compact amplifier circuits. The RO4360 laminate is based on glass-reinforced thermoset dielectric material which is dimensionally stable over a wide operating temperature range.
Among its many other broadband components, Krytar will show a new 180-deg., 3-dB hybrid coupler on the 2013 EuMC exhibition floor. The model 4100400 is suitable for commercial and military applications from 10 to 40 GHz. Designed for combining and dividing signals in amplifiers, switching circuits, and antenna beam-forming networks (to give a few examples), the 3-dB hybrid coupler maintains flat 3-dB coupling across the 30-GHz bandwidth. The typical amplitude imbalance is ±1.0 dB across the full frequency range with typical phase imbalance of ±12 deg.
The isolation between ports is typically better than 12 dB, while insertion loss is typically less than 1.7 dB and VSWR reaches a maximum of 1.80:1. The hybrid coupler measures just 0.86 x 1.10 x 0.50 in. and weighs 1.2 oz. with 2.4-mm female coaxial connectors (2.92-mm K-type female connectors are optional). It handles 20 W average power and 3 kW peak power and is designed for an operating temperature range of -54 to +85°C.