High Power Leaves its Mark on IMS

One of the main themes sweeping through IMS 2018 centered around the eye-opening innovations in the high-power arena. Among the companies showcasing this capability was Wolfspeed, which displayed its GTVA101K42EV 1400-W GaN-on-silicon-carbide (GaN-on-SiC) high-electron-mobility-transistor (HEMT). This 50-V device covers a frequency range of 960 to 1,215 MHz and achieves about 17 dB of gain. Visitors to Wolfspeed’s booth were able to see the GTVA101K42EV in action (Fig. 1).

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1. The GTVA101K42EV 1400-W GaN-on-silicon-carbide (GaN-on-SiC) high-electron-mobility-transistor (HEMT) operates from 960 to 1,215 MHz.

Wolfspeed also demonstrated its CMPA5259050F GaN monolithic-microwave-integrated-circuit (MMIC) power amplifier (PA) (Fig. 2). This 50-W PA operates from 5.2 to 5.9 GHz, and is intended for C-band radar applications.

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2. Wolfspeed gave visitors a chance to see the CMPA5259050F up close at the IMS 2018 exhibition.

Microsemi revealed its capabilities in the realm of high-power RF with the 1011GN-2200VP, which is a 2,200-W GaN pallet (Fig. 3). A live demonstration on the IMS show floor proved that the 1011GN-2200VP can indeed deliver 2,200 W of output power (Fig. 4).

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3. The 1011GN-2200VP is a 2,200-W GaN pallet developed by Microsemi.

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4. A demonstration proved the performance of the 1011GN-2200VP, as the measured output power exceeded 2,200 W.

Not to be outdone, Ampleon put the spotlight on its high-power products, particularly the BLF989 RF power transistor that’s designed for UHF broadcast applications. Figure 5 (taken from the IMS show floor) shows two BLF989 power transistors in a Doherty configuration. The BLF989 covers a frequency range of 400 to 860 MHz. It can deliver 140 W of average power (700 W peak) while achieving a typical efficiency of 34%.

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5. This photo shows two BLF989 RF power transistors in a Doherty configuration.

Other high-power products showcased by Ampleon include the BLA9H0912L(S)-1200P and BLCF9G4650(S)-20 devices based on laterally-diffused metal-oxide-semiconductor (LDMOS) technology (Fig. 6). The BLCF9G4650(S)-20 offers what the company describes as “breakthrough” performance, as it operates at frequencies as high as 5 GHz. Ampleon boasts that it offers 3 dB higher gain than GaN transistors.

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6. The BLA9H0912L(S)-1200P and the BLCF9G4650(S)-20 devices are both based on laterally-diffused metal-oxide-semiconductor (LDMOS) technology.

With its new brand identity and a variety of GaN-on-SiC RF power device solutions, Integra Technologies used IMS 2018 to formally launch and display its latest GaN-on-SiC integrated RF power modules (Fig. 7). The company is differentiating its products from standard integrated printed-circuit-board (PCB) amplifier assemblies, or pallets, noting that these new RF power modules were developed to “offer a new level of advanced integration that results in powerful—yet simple—higher-level building blocks for creating SWaP-C optimized high-power amplifiers (HPAs) found in pulsed and CW radar systems.”

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7. Another player in the high-power RF arena is Integra Technologies, which showcased its latest GaN-on-SiC RF power products.

Built-in functions can include RF matching, gate-pulsing and sequencing (GPS), output noise suppression, temperature compensation, and VSWR protection. Integra’s RF power modules come in a variety of RF bands. Standard RF power modules currently offer output power as high as 2,400 W along with efficiencies as high as 70%. Custom design and packaging approaches are also available. In addition, future GaN-on-SiC RF power solutions will extend into higher-frequency microwave territories.