Qorvo has announced its acquisition of Princeton, New Jersey-based United Silicon Carbide (UnitedSiC), a maker of silicon carbide (SiC) power semiconductors. The acquisition of United Silicon Carbide expands Qorvo’s reach into the fast-growing markets for electric vehicles (EVs), industrial power, circuit protection, renewables, and data-center power. United Silicon Carbide will become part of Qorvo’s Infrastructure & Defense Products (IDP) business and will be led by Dr. Chris Dries, who was formerly United Silicon Carbide’s president and CEO and is now general manager of Qorvo’s Power Device Solutions.
United Silicon Carbide’s product portfolio now spans more than 80 SiC FETs, JFETs, and Schottky diode devices. Based on a cascode configuration, the recently announced Generation 4 SiC FETs are specified at an industry-leading 750 V at 5.9 mΩ RDS(on), enabling new levels of SiC efficiency and performance critical for EV chargers, DC-DC converters, and traction drives, as well as telecom/server power supplies, variable speed motor drives, and solar photovoltaic (PV) inverters.
