With significantly improved convergence and faster simulation performance, ROHM's latest Level 3 (L3) SPICE models address demanding design challenges. In circuit design, simulation accuracy is critical. Earlier Level 1 SPICE models for SiC MOSFETs could replicate key device characteristics, but fell short in areas such as simulation convergence, along with prolonged computation times, revealing the need for an upgrade.
ROHM
ROHM released new Level 3 SPICE models that feature enhanced simulation speed.
These L3 models use a clean approach that addresses both computational stability and switching waveform accuracy while extensively reducing simulation time compared to the L1 models. This enables an accurate transient analysis of the entire circuit at a higher speed, streamlining device evaluation and loss assessment in the design. ROHM has released 37 L3 models for its fourth-generation SiC MOSFETs, but the L1 models will continue to be available.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
