With our evolution to Wolfspeed, we are leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry—a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. While there is a great deal of complexity and intellectual property in our designs and solutions, what we enable our customers to do is simple—we make systems more efficient while reducing cost and increasing performance.
Our gallium nitride (GaN) and Silicon Carbide components enable radar and communications systems to reach farther, perform longer, and consume less under even the harshest conditions.
Our GaN-on-Silicon Carbide technology solutions help meet the world’s connectivity needs by expanding existing 4G system capabilities and enabling the next generation of 5G networks.
Wolfspeed’s SpeedVal Kit platform enables testing of SiC devices, gate drivers, and controls at real operating conditions, allowing design engineers to transition to wide-bandgap...
IMS 2022, the flagship event dedicated to all things microwaves and RF, also includes the IEEE MTT-S Radio Frequency Integrated Circuits Symposium and the Automatic Radio Frequency...
Interest in components, circuit materials, and test solutions for millimeter-wave frequencies looms large as the RF/microwave industry readies for two versions of the annual IEEE...
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
From discrete high-power transistors to highly integrated ICs with combinations of analog and digital functions, the 2019 IMS exhibition will provide a good look at the latest...
Employing an output impedance adjustment topology in the peaking stage, a Doherty power amplifier that covers a frequency range of 1.4 to 2.6 GHz is designed and fabricated.
The characteristics of different substrates and device architectures make it possible to reach many speeds and frequencies with modern semiconductor devices and their packages...
Cree has signed a long-term arrangement worth $85 million to supply its Wolfspeed SiC material wafers to a manufacturer of power semiconductor devices.
If the mark of critical technology is that companies are willing to sue to protect it, and governments are blocking other countries from buying it, then gallium nitride will only...
Infineon is on schedule to close the deal. Now it needs approval from an American security panel that has grown increasingly skeptical of foreign chip deals.
Higher power densities and frequencies are pushing packages to their limits, while emerging wireless applications such as IoT and 5G crave lower-cost housings.
Gallium nitride is exerting its strength in myriad communications applications, and suppliers are trying to keep pace by developing solutions for next-generation systems.
Expect 2016 to be a busy year, as plans are in motion to create technologies with capabilities that push past the boundaries of today’s state-of-the-art solutions.
Innovations in RF/microwave product areas continue as manufacturers prepare for higher-volume applications in mobile wireless communications products and wearable devices.
Silicon devices still provide generous power levels through about 2 GHz, while GaN discrete transistors are filling many higher-frequency requirements for high output power.
Technology Editor Chris De Martino spoke with John Palmour, CTO and Co-Founder of Wolfspeed about the company's intentions and his take on gallium-nitride-based technology...
