With our evolution to Wolfspeed, we are leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry—a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. While there is a great deal of complexity and intellectual property in our designs and solutions, what we enable our customers to do is simple—we make systems more efficient while reducing cost and increasing performance.
Our gallium nitride (GaN) and Silicon Carbide components enable radar and communications systems to reach farther, perform longer, and consume less under even the harshest conditions.
Our GaN-on-Silicon Carbide technology solutions help meet the world’s connectivity needs by expanding existing 4G system capabilities and enabling the next generation of 5G networks.
IMS 2022, the flagship event dedicated to all things microwaves and RF, also includes the IEEE MTT-S Radio Frequency Integrated Circuits Symposium and the Automatic Radio Frequency...
Interest in components, circuit materials, and test solutions for millimeter-wave frequencies looms large as the RF/microwave industry readies for two versions of the annual IEEE...
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
From discrete high-power transistors to highly integrated ICs with combinations of analog and digital functions, the 2019 IMS exhibition will provide a good look at the latest...
Wolfspeed’s SpeedVal Kit platform enables testing of SiC devices, gate drivers, and controls at real operating conditions, allowing design engineers to transition to wide-bandgap...
Employing an output impedance adjustment topology in the peaking stage, a Doherty power amplifier that covers a frequency range of 1.4 to 2.6 GHz is designed and fabricated.
The characteristics of different substrates and device architectures make it possible to reach many speeds and frequencies with modern semiconductor devices and their packages...
Cree has signed a long-term arrangement worth $85 million to supply its Wolfspeed SiC material wafers to a manufacturer of power semiconductor devices.
